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                2SC3356(4G)

                TRANSISTOR (NPN)
                FEATURES
                Power dissipation
                PCM: 0.2 W (Tamb=25℃)
                Collector current
                ICM: 0.1 A
                Collector-base voltage
                V(BR)CBO: 20 V
                Operating and storage junction temperature range
                TJ, Tstg: -55℃ to +150℃

                2SC3356

                TRANSISTOR(NPN)
                FEATURES
                Power dissipation
                PCM: 0.2 W (Tamb=25℃)
                Collector current
                ICM: 0.1 A
                Collector-base voltage
                V(BR)CBO: 20 V
                Operating and storage junction temperature range
                TJ, Tstg: -55℃ to +150℃

                PTS9926B

                Features
                ? BVDSS>20V, RDS(ON)=11mΩ(Typ)@VGS=10V
                ? Low On-Resistance
                ? Fast Switching
                    encapsulation:SOP-8
                ? Lead-Free,Hg-Free, Green Product
                PTS9926B designed by the trench processing techniques to
                achieve extremely low on-resistance. And fast switching
                speed and improved transfer effective . These features
                combine to make this design an extremely efficient and
                reliable device for variety of DC-DC applications.

                PTS2017

                20V/17A N-Channel Advanced Power MOSFET
                Features
                ? Very Low RDS(on) @ 3.3V Logic.
                ? 3.3V Logic Level Control
                ? SOP8 Package
                ? Pb?Free, RoHS Compliant
                Applications
                ? Low Side Load Switch
                ? Battery Switch
                ? Optimized for Power Management Applications for
                Portable Products, such as Aeromodelling, Power bank,
                Brushless motor, Main board , and Others

                PT4953B

                -20V P-Channel Enhancemen t ModeMOSFET
                VDS= -2 0V
                RDS(ON), Vgs@-4.5V, Ids@-3.0A = 100mΩ
                RDS(ON), Vgs@-2.5V, Ids@-2.0A = 120mΩ
                Features
                High power and current handing capability
                Lead free product is acq uired

                PTMPD0203

                FEATURE
                ·lndependent Pinout to Each Device to
                Each Device to Ease Circuit Design
                ·High Current Schottky Diode
                ·Featuring a MOSFET and a
                ·Schottky Barrier Diode

                APPLICATION
                ·Optinized for Portable Applications Like Cell Phones
                Digital Cameras,Media Players,etc
                ·DC-DC Buck Circuits
                ·Li-ion Battery Applications
                ·Color Display and Camera Flash Regulators

                PT89S003F


                工作电压:2.4V-5.5V
                工作温度:-40~85°C
                封装:PT89S003FQ20R(QFN20)    PT89S003FX20U(TSSOP20)
                内核:高速1T 8051
                FIash ROM:16 Kbytes Flash ROM(MOVC禁止寻址0000H~00FFH)可重复写入1万次
                IAP:可code option 成0K、0.5K、1K、或16K
                EEPROM:独立的128bytes,可重复写入10万次,10年以上保存寿命
                SRAM:内部256bytes+外部256bytes
                系统时钟(fsys):内建高频16MHz振荡器(FHRC)
                作为系统↓时钟源时,fsys可通过编程器选择设定为16/8/4/1.33MHz
                频率误差:跨越(2.9V~5.5V)及(-20~85°C)应用环境,不超过±1%
                内置高频晶体振荡器电路
                可外接2~16MHz振荡器
                作为系统时钟源时,fsys可通过编程器选择使用外接晶振/1/2/4/12这四种分频中的一种
                IC系统时钟(fsys)对应的工作电压范围:
                >12MHz@2.9~5.5V
                ≤12MHz@2.4~5.5V

                PTN4559

                封装形式:PDFN5X6
                类型:N+P
                ESD Diode:否/否
                VDS (V):60/-60
                VGS (V):±20/±20
                VTH (V)Typ:1.9/-2.5
                ID* (A) 25°C:6/-5
                PD* (W) 25°C:2月2日
                RDS(ON) (mΩ max) at VGS= 10V:60/75
                RDS(ON) (mΩ max) at VGS= 4.5V:80/95
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:风扇

                PTS4559

                封装形式:SOP8
                类型:N+P
                ESD Diode:否/否
                VDS (V):60/-60
                VGS (V):±20/±20
                VTH (V)Typ:1.9/-2.5
                ID* (A) 25°C:6/-5
                PD* (W) 25°C:2月2日
                RDS(ON) (mΩ max) at VGS= 10V:60/75
                RDS(ON) (mΩ max) at VGS= 4.5V:80/95
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:风扇

                PTS4614

                封装形式:SOP8
                类型:N+P
                ESD Diode:否/否
                VDS (V):40/-40
                VGS (V):±20/±20
                VTH (V)Typ:1.6/-1.6
                ID* (A) 25°C:7/-6
                PD* (W) 25°C:2月2日
                RDS(ON) (mΩ max) at VGS= 10V:-
                RDS(ON) (mΩ max) at VGS= 4.5V:20/35
                RDS(ON) (mΩ max) at VGS= 2.5V:30/45
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:风扇

                PTS4616

                封装形式:SOP8
                类型:N+P
                ESD Diode:否/否
                VDS (V):30/-30
                VGS (V):±20/±20
                VTH (V)Typ:1.6/-1.6
                ID* (A) 25°C:8/-7
                PD* (W) 25°C:2月2日
                RDS(ON) (mΩ max) at VGS= 10V:20/28
                RDS(ON) (mΩ max) at VGS= 4.5V:25/40
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:风扇

                PTF640

                封装形式:TO-220F
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±30
                VTH (V)Typ:4
                ID* (A) 25°C:18
                PD* (W) 25°C:36
                RDS(ON) (mΩ max) at VGS= 10V:0.18
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:HID SMPS

                PTP640

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±30
                VTH (V)Typ:4
                ID* (A) 25°C:18
                PD* (W) 25°C:90
                RDS(ON) (mΩ max) at VGS= 10V:0.18
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:HID SMPS

                PTS4503

                封装形式:SOP8
                类型:N+P
                ESD Diode:否/否
                VDS (V):30/-30
                VGS (V):±12/±16
                VTH (V)Typ:1.6/-1.6
                ID* (A) 25°C:6.5/-5.5
                PD* (W) 25°C:2月2日
                RDS(ON) (mΩ max) at VGS= 10V:26/28
                RDS(ON) (mΩ max) at VGS= 4.5V:35/45
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:无线充电、移动电源

                PTF630

                封装形式:TO-220F
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±30
                VTH (V)Typ:4
                ID* (A) 25°C:9
                PD* (W) 25°C:36
                RDS(ON) (mΩ max) at VGS= 10V:0.4
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:HID SMPS

                PTP630

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±30
                VTH (V)Typ:4
                ID* (A) 25°C:9
                PD* (W) 25°C:90
                RDS(ON) (mΩ max) at VGS= 10V:0.4
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用: HID SMPS

                PTS4606

                封装形式:SOP8
                类型:N+P
                ESD Diode:否/否
                VDS (V):30/-30
                VGS (V):±20/±20
                VTH (V)Typ:1.6/-1.6
                ID* (A) 25°C:5.8/-5.1
                PD* (W) 25°C:2月2日
                RDS(ON) (mΩ max) at VGS= 10V:31/48
                RDS(ON) (mΩ max) at VGS= 4.5V:43/72
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:无线充电、移动电源

                PT4606

                封装形式:SOP8
                类型:N+P
                ESD Diode:否/否
                VDS (V):30/-30
                VGS (V):±20/±20
                VTH (V)Typ:1.6/-1.6
                ID* (A) 25°C:5.8/-6.5
                PD* (W) 25°C:2月2日
                RDS(ON) (mΩ max) at VGS= 10V:31/46
                RDS(ON) (mΩ max) at VGS= 4.5V:43/72
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:无线充电、移动电源

                PTD20N20

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:20
                PD* (W) 25°C:45
                RDS(ON) (mΩ max) at VGS= 10V:75
                RDS(ON) (mΩ max) at VGS= 4.5V:80
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用: TV

                PTY20N20

                封装形式:TO-263
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:20
                PD* (W) 25°C:60
                RDS(ON) (mΩ max) at VGS= 10V:75
                RDS(ON) (mΩ max) at VGS= 4.5V:80
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用: TV

                PTP20N20

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:20
                PD* (W) 25°C:60
                RDS(ON) (mΩ max) at VGS= 10V:75
                RDS(ON) (mΩ max) at VGS= 4.5V:80
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用: TV

                PTD10N20

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±20
                VTH (V)Typ:3
                ID* (A) 25°C:10
                PD* (W) 25°C:25
                RDS(ON) (mΩ max) at VGS= 10V:135
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用: TV

                PTP10N20

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±20
                VTH (V)Typ:3
                ID* (A) 25°C:10
                PD* (W) 25°C:30
                RDS(ON) (mΩ max) at VGS= 10V:135
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用: TV

                PTD05N20

                封装形式:SOT23-3L
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:5
                PD* (W) 25°C:20
                RDS(ON) (mΩ max) at VGS= 10V:135
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用: LED

                PTL02N20

                封装形式:SOT23-3L
                类型:单N
                ESD Diode:
                VDS (V):200
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:2
                PD* (W) 25°C:1
                RDS(ON) (mΩ max) at VGS= 10V:150
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用: LED

                PTD256

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):150
                VGS (V):±20
                VTH (V)Typ:2
                ID* (A) 25°C:19
                PD* (W) 25°C:60
                RDS(ON) (mΩ max) at VGS= 10V:90
                RDS(ON) (mΩ max) at VGS= 4.5V:105
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:TV  LED

                PTD254

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):150
                VGS (V):±20
                VTH (V)Typ:2
                ID* (A) 25°C:28
                PD* (W) 25°C:45
                RDS(ON) (mΩ max) at VGS= 10V:50
                RDS(ON) (mΩ max) at VGS= 4.5V:60
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:TV  LED

                PTD12N15

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):150
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:12
                PD* (W) 25°C:30
                RDS(ON) (mΩ max) at VGS= 10V:160
                RDS(ON) (mΩ max) at VGS= 4.5V:360
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:POE

                PTD06N15

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):150
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:6
                PD* (W) 25°C:16
                RDS(ON) (mΩ max) at VGS= 10V:300
                RDS(ON) (mΩ max) at VGS= 4.5V:360
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:POE

                PTS02N15

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):150
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:2
                PD* (W) 25°C:2.5
                RDS(ON) (mΩ max) at VGS= 10V:300
                RDS(ON) (mΩ max) at VGS= 4.5V:360
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:POE

                PTP4115

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):150
                VGS (V):±25
                VTH (V)Typ:3.5
                ID* (A) 25°C:100
                PD* (W) 25°C:360
                RDS(ON) (mΩ max) at VGS= 10V:11.5
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:EBIKE

                PTD15N10

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):100
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:15
                PD* (W) 25°C:30
                RDS(ON) (mΩ max) at VGS= 10V:90
                RDS(ON) (mΩ max) at VGS= 4.5V:100
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:Lighting

                PTL03N10A

                封装形式:SOT23-3L
                类型:单N
                ESD Diode:
                VDS (V):100
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:3
                PD* (W) 25°C:1.2
                RDS(ON) (mΩ max) at VGS= 10V:130
                RDS(ON) (mΩ max) at VGS= 4.5V:145
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:Lighting

                PTL03N10

                封装形式:SOT23
                类型:单N
                ESD Diode:
                VDS (V):100
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:2.6
                PD* (W) 25°C:1.2
                RDS(ON) (mΩ max) at VGS= 10V:165
                RDS(ON) (mΩ max) at VGS= 4.5V:180
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:Lighting

                PT01N10

                封装形式:SOT23
                类型:单N
                ESD Diode:
                VDS (V):100
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:1
                PD* (W) 25°C:1
                RDS(ON) (mΩ max) at VGS= 10V:600
                RDS(ON) (mΩ max) at VGS= 4.5V:650
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:Lighting

                PTW4110

                封装形式:TO-3P
                类型:单N
                ESD Diode:
                VDS (V):100
                VGS (V):±25
                VTH (V)Typ:3
                ID* (A) 25°C:160
                PD* (W) 25°C:300
                RDS(ON) (mΩ max) at VGS= 10V:5
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:EBIKE

                PTP28P10

                封装形式:TO-252
                类型:单P
                ESD Diode:
                VDS (V):-100
                VGS (V):±20
                VTH (V)Typ:-1.9
                ID* (A) 25°C:-30
                PD* (W) 25°C:120
                RDS(ON) (mΩ max) at VGS= 10V:55
                RDS(ON) (mΩ max) at VGS= 4.5V:60
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:  General Purpose

                PTP4110

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):100
                VGS (V):±25
                VTH (V)Typ:3
                ID* (A) 25°C:160
                PD* (W) 25°C:300
                RDS(ON) (mΩ max) at VGS= 10V:5
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:EBIKE

                PTD28P10

                封装形式:TO-252
                类型:单P
                ESD Diode:
                VDS (V):-100
                VGS (V):±20
                VTH (V)Typ:-1.9
                ID* (A) 25°C:-30
                PD* (W) 25°C:90
                RDS(ON) (mΩ max) at VGS= 10V:55
                RDS(ON) (mΩ max) at VGS= 4.5V:60
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:  General Purpose

                PTY4310

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):100
                VGS (V):±25
                VTH (V)Typ:3
                ID* (A) 25°C:130
                PD* (W) 25°C:256
                RDS(ON) (mΩ max) at VGS= 10V:5.5
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用:LED
                ?

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