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                PTW20N50

                Features
                ■ RDS(on) (Max 0.26 Ω )@VGS=10V
                ■ Gate Charge (Typical 90nC)
                ■ Improved dv/dt Capability, High Ruggedness
                ■ 100% Avalanche Tested
                ■ Maximum Junction Temperature Range (150°C)

                PTW9N90

                Features
                ■ RDS(on) (Max 1.4 Ω )@VGS=10V
                ■ Gate Charge (Typical 47nC)
                ■ Improved dv/dt Capability, High Ruggedness
                ■ 100% Avalanche Tested
                ■ Maximum Junction Temperature Range (150°C)

                PTU50N03

                60A , 25 V N-Channel MOSFET
                Features
                ●RDS(ON) = 5.2mΩ @VGS = 10 V
                ●Low capacitance
                ●Optimized gate charge
                ●Fast switching capability
                ●Avalanche energy specified

                PTU7N65

                650V N-Channe MOSFET

                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge : 16 nC (Typ.)
                ●BVDSS=650V,ID=6.5A
                ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTU6N65

                650V N-Channe MOSFET

                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge : 16 nC (Typ.)
                ●BVDSS=650V,ID=6A
                ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTU6N60

                600V N-Channe MOSFET

                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge : 16 nC (Typ.)
                ●BVDSS=600V,ID=6A
                ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTU5N65

                650V N-Channel MOSFET

                Features
                ●Low Intrin sic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge : 15 nC (Typ.)
                ●BVDSS=650V,ID=4.5A
                ●Lower RDS(on) : 2.5Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTU2N80

                HIGH VOLTAGE N-Channel MOSFET
                600V N-Channel MOSFET

                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge :12 nC (Typ.)
                ●BVDSS=800V,ID=2A
                ●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTP9540

                P-Channel Enhancement Mode Power MOSFET
                Description
                The PTP9540 uses advanced trench technology and designto provide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.

                General Features
                ● VDS =-100V,ID =-30ARDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
                ● Super high dense cell design
                ● Advanced trench process technology
                ● Reliable and rugged
                ● High density cell design for ultra low On-Resistance

                Application
                ● Portable equipment and battery powered systems

                PTP8580

                Description
                The PTP8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

                General Features
                ● VDS =85V,ID =80ARDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
                ● High density cell design for ultra low Rdson
                ● Fully characterized avalanche voltage and current
                ● Special designed for convertors and power controls
                ● Good stability and uniformity with high EAS
                ● Excellent package for good heat dissipation
                ● Special process technology for high ESD capability

                Application
                ●Power switching application
                ●Hard switched and High frequency circuits
                ●Uninterruptible power supply

                PTP7190

                Description
                The PTP7190 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

                General Features
                ● VDS = 71V,ID =90ARDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
                ● Special process technology for high ESD capability
                ● High density cell design for ultra low Rdson
                ● Fully characterized avalanche voltage and current
                ● Good stability and uniformity with high EAS
                ● Excellent package for good heat dissipation

                Application
                ●Power switching application
                ●Hard switched and High frequency circuits
                ●Uninterruptible power supply

                PTP1579

                Description
                The PTP1579 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

                General Features
                ● VDS =150V,ID =79ARDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ)
                ● High density cell design for ultra low Rdson
                ● Fully characterized avalanche voltage and current
                ● Good stability and uniformity with high EAS
                ● Excellent package for good heat dissipation
                ● Special process technology for high ESD capability

                Application
                ●Power switching application
                ●Hard switched and high frequency circuits
                ●Uninterruptible power supply

                PTP1550

                Description
                The PTP1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

                General Features
                ● VDS =150V,ID =50A
                RDS(ON) <23mΩ @ VGS=10V
                ● High density cell design for ultra low Rdson
                ● Fully characterized avalanche voltage and current
                ● Good stability and uniformity with high EAS
                ● Excellent package for good heat dissipation
                ● Special process technology for high ESD capability

                Application
                ●Power switching application
                ●Hard switched and High frequency circuits
                ●Uninterruptible power supply

                PTF50M06

                Features
                ? 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
                ? Low gate charge ( typical 33nC)
                ? Fast switching
                ? 100% avalanche tested
                ? Improved dv/dt capability

                General Description
                This Power MOSFET is produced using PHILOP’s advance dplanar stripe, DMOS technology. This latest technology has been
                especially designed to minimize on-state resistance, have a high
                rugged avalanche characteristics. These devices are well suited
                for high efficiency switch mode power supplies, active power
                factor correction, electronic lamp ballasts based on half bridge
                topology.

                PTP8N60

                Features
                ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
                ■ Gate charge (Typical 30nC)
                ■ High ruggedness
                ■ Fast switching
                ■ 100% AvalancheTested
                ■ Improved dv/dt capability

                General Description
                This Power MOSFET is produced using PHILOP’s advance dplanar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics. These devices are well suitedfor high efficiency switch mode power supplies, activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology

                PTP5N65-E

                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge : 15 nC (Typ.)
                ●BVDSS=650V,ID=4.5A
                ●Lower RDS(on) : 2.7Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTP2N80

                800V N-Channel MOSFET
                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge :Qg= 13nC (Typ.)
                ●BVDSS=800V,ID=3A
                ●RDS(on) : 5 Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTP01H11

                Description
                The PTP01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

                General Features
                ● VDS =100V,ID =110ARDS(ON) <9mΩ @ VGS=10V
                ● High density cell design for ultra low Rdson
                ● Fully characterized avalanche voltage and current
                ● Good stability and uniformity with high EAS
                ● Excellent package for good heat dissipation
                ● Special process technology for high ESD capability

                Application
                ● Power switching application
                ● Hard switched and high frequency circuits
                ● Uninterruptible power supply

                PTP01H10

                Description
                The PTP01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
                General Features

                ● VDS = 100V,ID =100ARDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
                ● Special process technology for high ESD capability
                ● High density cell design for ultra low Rdson
                ● Fully characterized avalanche voltage and current
                ● Good stability and uniformity with high EAS
                ● Excellent package for good heat dissipation

                Application
                ● Power switching application
                ● Hard switched and high frequency circuits
                ● Uninterruptible power supply

                PTF12N60

                Features
                ■ RDS(on) (Max 0.70 Ω )@VGS=10V
                ■ Gate Charge (Typical 50nC)
                ■ Improved dv/dt Capability, High Ruggedness
                ■ 100% Avalanche Tested
                ■ Maximum Junction Temperature Range (150°C)

                PTF10N65

                Features
                ■ RDS(on) (Typical 0.70 Ω )@VGS=10V
                ■ Gate Charge (Typical 45nC)
                ■ Improved dv/dt Capability, High Ruggedness
                ■ 100% Avalanche Tested
                ■ Maximum Junction Temperature Range (150°C)

                General Description
                This Power MOSFET is produced using Wisdom’s advanced
                planar stripe, DMOS technology. This latest technology has been
                especially designed to minimize on-state resistance, have a high
                rugged avalanche characteristics. These devices are well suited
                for high efficiency switch mode power supplies, active power factor
                correction, electronic lamp ballasts based on half bridge topology.

                PTF10N60

                Features
                10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
                Low gate charge ( typical 48nC)
                High ruggedness
                Fast switching
                100% avalanche tested
                Improved dv/dt capability

                PTF8N60

                Features
                ■ RDS(on) (Max 1.2 Ω )@VGS=10V
                ■ Gate Charge(Typical 28nC)
                ■ Improved dv/dt Capability, High Ruggedness
                ■ 100% Avalanche Tested
                ■ Maximum Junction Temperature Range(150°C)

                PTF5N60

                Features
                ■4.5A,600v,RDS(on)=2.5Ω@VGS=10V
                ■ Gate charge (Typical 17nC)
                ■ High ruggedness
                ■Fast switching
                ■100% AvalancheTested
                ■Improved dv/dt capability

                General Description

                This Power MOSFET is producedusingPHILOP’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimizeon-state resistance, have a highrugged avalanche characteristics, suchas fastswitching time,lowon resistance.low gate charge and especially excellentavalanchecharacteristics.Thispower MOS ET is usually usedatF ACadaptors, on the batterychargerand SMPS

                PTF3N80

                Features
                ■ RDS(on) (Max 5.0 Ω )@VGS=10V
                ■ Gate Charge(Typical 15.0nC)
                ■ Improved dv/dt Capability, High Ruggedness
                ■ 100% Avalanche Tested
                ■ Maximum Junction Temperature Range(150°C)

                PTD7580

                Description
                The PTD7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
                General Features
                ● VDS = 75V,ID =80ARDS(ON) <8mΩ @ VGS=10V(Typ:6.5mΩ)
                ● Special process technology for high ESD capability
                ● Special designed for convertors and power controls
                ● High density cell design for ultra low Rdson
                ● Fully characterized avalanche voltage and current
                ● Good stability and uniformity with high EAS
                ● Excellent package for good heat dissipation

                Application
                ● Power switching application
                ● Hard switched and high frequency circuits
                ● Uninterruptible power supply

                PTD630

                200V N-Channel MOSFET
                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge : 22 nC (Typ.)
                ●BVDSS=200V,ID=9A
                ●Lower RDS(on) : 0.4 Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTD50N03

                60A , 25 V N-Channel MOSFET
                Features
                ●RDS(ON) = 5.2mΩ @VGS = 10 V
                ●Low capacitance
                ●Optimized gate charge
                ●Fast switching capability
                ●Avalanche energy specified

                PTD30P55

                DescriptionThe PTD30P55 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
                General Features
                ● VDS =-55V,ID =-30ARDS(ON) <40mΩ @ VGS=-10V
                ● High density cell design for ultra low Rdson
                ● Fully characterized avalanche voltage and current
                ● Good stability and uniformity with high EAS
                ● Excellent package for good heat dissipation

                Application
                ●Power switching application
                ●Hard switched and high frequency circuits
                ●Uninterruptible power supply

                PTD7N65

                650V N-Channel MOSFET
                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge : 16 nC (Typ.)
                ●BVDSS=650V,ID=6.5A
                ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTD6N65

                650V N-Channel MOSFET
                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge : 16 nC (Typ.)
                ●BVDSS=650V,ID=6A
                ●Lower RDS(on) : 1.5Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTD6N60

                600V N-Channel MOSFET
                Features
                ● Low Intrinsic Capacitances
                ● Excellent Switching Characteristics
                ● Extended Safe Operating Area
                ● Unrivalled Gate Charge : 16 nC (Typ.)
                ● BVDSS=600V,ID=6A
                ● Lower RDS(on) : 1.5Ω (Max) @VG=10V
                ● 100% Avalanche Tested

                PTD5N65

                650V N-Channel MOSFET
                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge : 15 nC (Typ.)
                ●BVDSS=650V,ID=4.5A
                ●Lower RDS(on) : 2.5Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTD5N50

                N-Channel MOSFET
                Features
                ■ RDS(on) (Max 1.5Ω) @ VGS=10V
                ■ GateCharge(Typical 20nC)
                ■ Improved dv/dt Capability, High Ruggedness
                ■ 100% Avalanche Tested
                ■MaximumJunctionTemperatureRange(150°C)

                PTD2N80

                HIGH VOLTAGE N-Channel MOSFET600V N-Channel MOSFET

                Features
                ●Low Intrinsic Capacitances
                ●Excellent Switching Characteristics
                ●Extended Safe Operating Area
                ●Unrivalled Gate Charge :12 nC (Typ.)
                ●BVDSS=800V,ID=2A
                ●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
                ●100% Avalanche Tested

                PTR1N60

                N-CHANNEL 600V - 8 W - 1A DPAK / IPAK / TO-92Power MOSFET
                ●TYPICAL RDS(on) = 8 W
                ●EXTREMELY HIGH dv/dt CAPABILITY
                ● 100% AVALANCHE TESTED
                ●GATE CHARGE MINIMIZED
                ●NEW HIGH VOLTAGE BENCHMARK

                APPLICATIONS
                ●SWITCH MODE LOW POWER SUPPLIES(SMPS)
                ●LOW POWER, LOW COST CFL (COMPACTFLUORESCENT LAMPS)
                ● LOW POWER BATTERY CHARGERS

                PTF9N90

                封装形式:TO-220F
                类型:单N
                ESD Diode:
                VDS (V):900
                VGS (V):±30
                VTH (V)Typ:4
                ID* (A) 25°C:9
                PD* (W) 25°C:45
                RDS(ON) (mΩ max) at VGS= 10V:1.9
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用SMPS

                PTP9N90

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):900
                VGS (V):±30
                VTH (V)Typ:4
                ID* (A) 25°C:9
                PD* (W) 25°C:240
                RDS(ON) (mΩ max) at VGS= 10V:1.9
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用SMPS

                PTF7N80

                封装形式:TO-220F
                类型:单N
                ESD Diode:
                VDS (V):800
                VGS (V):±30
                VTH (V)Typ:4
                ID* (A) 25°C:7
                PD* (W) 25°C:45
                RDS(ON) (mΩ max) at VGS= 10V:1.4
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用SMPS

                PTP7N80

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):800
                VGS (V):±30
                VTH (V)Typ:4
                ID* (A) 25°C:7
                PD* (W) 25°C:240
                RDS(ON) (mΩ max) at VGS= 10V:1.4
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用SMPS
                ?

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