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                PT8822

                VDS= 20V
                RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ
                RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ
                RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ
                Features
                Advanced trench process technology
                High Density Cell Design For Ultra Low On-Resistance
                Ideal for Li ion battery

                PT2010E

                N-Channel Enhancement Mode Power MOSFET
                Description
                The PT2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
                General Features
                ● VDS = 20V,ID =7A
                RDS(ON) < 27mΩ @ VGS=2.5V
                RDS(ON) < 21mΩ @ VGS=4.5V
                ESD Rating: 2000V HBM
                ● High power and current handing capability
                ● Lead free product is acquired
                ● Surface mount package
                Application
                ●PWM application
                ●Load switch

                PTY8726

                Features
                ? Low On-Resistance
                ? Fast Switching
                ? 100% Avalanche Tested
                ? Repetitive Avalanche Allowed up to Tjmax
                ? Lead-Free, RoHS Compliant
                Description
                PTY8726 designed by the trench process
                techniques to achieve extremely low on-resistance.
                Additional features of this design can operate at
                high junction temperature, fast switching speed and
                improved repetitive avalanche rating . These
                features combine to make this design an extremely
                efficient and reliable device for use in Motor
                applications and a wide variety of other applications.
                Absolute Maximum Ratings
                Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
                functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
                absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
                measured under board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified.

                PTU06N02

                Features
                ? Very Low RDS(on) @ 2.5V Logic.
                ? V Logic Level Control
                ? TO-251 Package
                ? Pb?Free, RoHS Compliant
                Applications
                ? Low Side Load Switch
                ? Battery Switch
                ? Optimized for Power Management Applications for
                Portable Products, such as Aeromodelling, Power bank,
                Brushless motor, Main board , and Others

                PTI03N02

                Features
                ? Very Low RDS(on) @ 2.5V Logic.
                ? 3.3V Logic Level Control
                ? TO-262 Package
                ? Pb?Free, RoHS Compliant
                Applications
                ? Low Side Load Switch
                ? Battery Switch
                ? Optimized for Power Management Applications for
                Portable Products, such as Aeromodelling, Power bank,
                Brushless motor, Main board , and Others
                BVDSS 20 V
                ID 120 A
                RDSON@VGS=4.5V 2.6 mΩ
                RDSON@VGS=2.5V 3.8 mΩ

                SI2307

                -30V P-Channel Enhancemen t M o d e M O S F E T
                VDS= -30V
                RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ
                RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87mΩ
                Features
                Advanced trench process technology
                High Density Cell Design For Ultra Low On-Resistance
                Package Dimensions

                XP152A12COMR

                -20V P-Channel Enhancemen t ModeMOSFET
                VDS= -20V
                RDS(ON), Vgs@-4.5V, Ids@-2.8A<130mΩ
                RDS(ON), Vgs@-2.5V, Ids@-2.0A<190mΩ
                Features
                Advanced trench process technology
                High Density Cell Design For Ultra Low On-Resistance
                Package Dimensions

                XP151A13COMR

                20V N-Channel Enhancement Mode MOSFET
                VDS= 20V
                RDS(ON), Vgs@ 4.5V, Ids@3.6A<85mΩ
                RDS(ON), Vgs@ 2.5V, Ids@ 2.0A<115mΩ
                Features
                Advanced trench process technology
                High Density Cell Design For Ultra Low On-Resistance
                Package Dimensions

                XP151A13AOMR

                FDN335N

                20V N-Channel Enhancemen t ModeMOSFET
                VDS= 20V
                RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70mΩ
                RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=100mΩ
                Features
                Advanced trench process technology
                High Density Cell Design For Ultra Low On-Resistance
                Package Dimensions

                FDN306P

                -12V P-Channel Enhancemen t ModeMOSFET
                Features
                ? –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
                RDS(ON) = 50 mΩ @ VGS = –2.5 V
                RDS(ON) = 80 mΩ @ VGS = –1.8 V
                ? Fast switching speed
                Applications
                ? Battery management
                ? Load switch
                ? Battery protection

                BSS84

                -50V P-Channel Enhancement Mode MOSFET
                VDS= -50V
                RDS(ON), Vgs@-10V, Ids@-0.1A<8Ω
                RDS(ON), Vgs@-5, Ids@-0.1A <10Ω
                Features
                Advanced trench process technology
                High Density Cell Design For Ultra Low On-Resistance
                Package Dimensions

                2SC3356(4G)

                TRANSISTOR (NPN)
                FEATURES
                Power dissipation
                PCM: 0.2 W (Tamb=25℃)
                Collector current
                ICM: 0.1 A
                Collector-base voltage
                V(BR)CBO: 20 V
                Operating and storage junction temperature range
                TJ, Tstg: -55℃ to +150℃

                2SC3356

                TRANSISTOR(NPN)
                FEATURES
                Power dissipation
                PCM: 0.2 W (Tamb=25℃)
                Collector current
                ICM: 0.1 A
                Collector-base voltage
                V(BR)CBO: 20 V
                Operating and storage junction temperature range
                TJ, Tstg: -55℃ to +150℃

                PTS9926B

                Features
                ? BVDSS>20V, RDS(ON)=11mΩ(Typ)@VGS=10V
                ? Low On-Resistance
                ? Fast Switching
                    encapsulation:SOP-8
                ? Lead-Free,Hg-Free, Green Product
                PTS9926B designed by the trench processing techniques to
                achieve extremely low on-resistance. And fast switching
                speed and improved transfer effective . These features
                combine to make this design an extremely efficient and
                reliable device for variety of DC-DC applications.

                PTS2017

                20V/17A N-Channel Advanced Power MOSFET
                Features
                ? Very Low RDS(on) @ 3.3V Logic.
                ? 3.3V Logic Level Control
                ? SOP8 Package
                ? Pb?Free, RoHS Compliant
                Applications
                ? Low Side Load Switch
                ? Battery Switch
                ? Optimized for Power Management Applications for
                Portable Products, such as Aeromodelling, Power bank,
                Brushless motor, Main board , and Others

                PT4953B

                -20V P-Channel Enhancemen t ModeMOSFET
                VDS= -2 0V
                RDS(ON), Vgs@-4.5V, Ids@-3.0A = 100mΩ
                RDS(ON), Vgs@-2.5V, Ids@-2.0A = 120mΩ
                Features
                High power and current handing capability
                Lead free product is acq uired

                PTMPD0203

                FEATURE
                ·lndependent Pinout to Each Device to
                Each Device to Ease Circuit Design
                ·High Current Schottky Diode
                ·Featuring a MOSFET and a
                ·Schottky Barrier Diode

                APPLICATION
                ·Optinized for Portable Applications Like Cell Phones
                Digital Cameras,Media Players,etc
                ·DC-DC Buck Circuits
                ·Li-ion Battery Applications
                ·Color Display and Camera Flash Regulators

                PTP3034

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):40
                VGS (V):±20
                VTH (V)Typ:2
                ID* (A) 25°C:240
                PD* (W) 25°C:270
                RDS(ON) (mΩ max) at VGS= 10V:3
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用     MOTO TOOL

                PTP1404

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):40
                VGS (V):±20
                VTH (V)Typ:2.6
                ID* (A) 25°C:180
                PD* (W) 25°C:210
                RDS(ON) (mΩ max) at VGS= 10V:3.6
                RDS(ON) (mΩ max) at VGS= 4.5V:-
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用? ? ?MOTO TOOL

                PTN6234

                封装形式:PDFN5X6
                类型:单N
                ESD Diode:
                VDS (V):40
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:100
                PD* (W) 25°C:130
                RDS(ON) (mΩ max) at VGS= 10V:4
                RDS(ON) (mΩ max) at VGS= 4.5V:6.5
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用 QC /MOTO TOOL

                PTP440

                封装形式:TO-220
                类型:单N
                ESD Diode:
                VDS (V):40
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:82
                PD* (W) 25°C:80
                RDS(ON) (mΩ max) at VGS= 10V:7.5
                RDS(ON) (mΩ max) at VGS= 4.5V:9.5
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用     MOTO TOOL

                PTN6442

                封装形式:PDFN5X6
                类型:单N
                ESD Diode:
                VDS (V):40
                VGS (V):±20
                VTH (V)Typ:1.8
                ID* (A) 25°C:60
                PD* (W) 25°C:32
                RDS(ON) (mΩ max) at VGS= 10V:7.5
                RDS(ON) (mΩ max) at VGS= 4.5V:9.5
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用 Load Switch

                PTS9468

                封装形式:SOP8
                类型:单N
                ESD Diode:
                VDS (V):40
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:150
                PD* (W) 25°C:150
                RDS(ON) (mΩ max) at VGS= 10V:1.9
                RDS(ON) (mΩ max) at VGS= 4.5V:2.6
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用 Load Switch

                PTD6548

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:150
                PD* (W) 25°C:150
                RDS(ON) (mΩ max) at VGS= 10V:1.9
                RDS(ON) (mΩ max) at VGS= 4.5V:2.6
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用           MOTO TOOL

                PTN6548

                封装形式:PDFN5X6
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:150
                PD* (W) 25°C:150
                RDS(ON) (mΩ max) at VGS= 10V:1.8
                RDS(ON) (mΩ max) at VGS= 4.5V:2.5
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用           MOTO TOOL

                PTD508

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:130
                PD* (W) 25°C:150
                RDS(ON) (mΩ max) at VGS= 10V:3.5
                RDS(ON) (mΩ max) at VGS= 4.5V:5
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用           MOTO TOOL

                PTN6512

                封装形式:PDFN5X6
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:130
                PD* (W) 25°C:150
                RDS(ON) (mΩ max) at VGS= 10V:3.5
                RDS(ON) (mΩ max) at VGS= 4.5V:5
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用           MOTO TOOL

                PTS4240

                封装形式:SOP8
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.3
                ID* (A) 25°C:24
                PD* (W) 25°C:3
                RDS(ON) (mΩ max) at VGS= 10V:4
                RDS(ON) (mΩ max) at VGS= 4.5V:5.5
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用           Load Switch

                PTD3098

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:90
                PD* (W) 25°C:115
                RDS(ON) (mΩ max) at VGS= 10V:5.5
                RDS(ON) (mΩ max) at VGS= 4.5V:7
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用 Power Bank

                PTN3098

                封装形式:PDFN5X6
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:90
                PD* (W) 25°C:90
                RDS(ON) (mΩ max) at VGS= 10V:5.5
                RDS(ON) (mΩ max) at VGS= 4.5V:7
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用 Power Bank

                PTN7530

                封装形式:PDFN3333
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:30
                PD* (W) 25°C:20
                RDS(ON) (mΩ max) at VGS= 10V:6
                RDS(ON) (mΩ max) at VGS= 4.5V:8
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用?Load Switch

                PTD3006

                封装形式:TO-525
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:80
                PD* (W) 25°C:80
                RDS(ON) (mΩ max) at VGS= 10V:7
                RDS(ON) (mΩ max) at VGS= 4.5V:9
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用? ? ? ?Main Board

                PTN3006

                封装形式:PDFN5X6
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:80
                PD* (W) 25°C:65
                RDS(ON) (mΩ max) at VGS= 10V:7
                RDS(ON) (mΩ max) at VGS= 4.5V:9
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用?Main Board

                PTO3006

                封装形式:PDFN3333
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:80
                PD* (W) 25°C:42
                RDS(ON) (mΩ max) at VGS= 10V:7
                RDS(ON) (mΩ max) at VGS= 4.5V:9
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用 Main Board

                PT4430

                封装形式:SOP88POS
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:18
                PD* (W) 25°C:2.5
                RDS(ON) (mΩ max) at VGS= 10V:7.5
                RDS(ON) (mΩ max) at VGS= 4.5V:10
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用?Load Switch

                PT4410

                封装形式:SOP8
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.1
                ID* (A) 25°C:10
                PD* (W) 25°C:2
                RDS(ON) (mΩ max) at VGS= 10V:13.5
                RDS(ON) (mΩ max) at VGS= 4.5V:20
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用?Load Switch

                PTS4566

                封装形式:SOP8
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:12
                PD* (W) 25°C:2.5
                RDS(ON) (mΩ max) at VGS= 10V:12
                RDS(ON) (mΩ max) at VGS= 4.5V:15
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用 Load Switch

                PTT7506

                封装形式:PDFN333
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:18
                PD* (W) 25°C:20
                RDS(ON) (mΩ max) at VGS= 10V:12
                RDS(ON) (mΩ max) at VGS= 4.5V:15
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用 Load Switch

                PTD3004

                封装形式:TO-252
                类型:单N
                ESD Diode:
                VDS (V):30
                VGS (V):±20
                VTH (V)Typ:1.6
                ID* (A) 25°C:50
                PD* (W) 25°C:50
                RDS(ON) (mΩ max) at VGS= 10V:13
                RDS(ON) (mΩ max) at VGS= 4.5V:16
                RDS(ON) (mΩ max) at VGS= 2.5V:-
                RDS(ON) (mΩ max) at VGS= 1.8V:-
                典型应用?Main Board
                ?

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